STATIC NEGATIVE RESISTANCE IN AVALANCHE DIODES

被引:3
作者
BOWERS, HC
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 02期
关键词
D O I
10.1109/PROC.1968.6244
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:222 / +
页数:1
相关论文
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SOLID-STATE ELECTRONICS, 1960, 1 (01) :54-69
[2]  
GIBSON AF, 1957, PROGRESS SEMICOND ED, V2, P213
[3]  
GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P213
[5]  
MISAWA T, 1966, IEEE T ELECTRON DEV, VED13, P143, DOI 10.1109/T-ED.1966.15648
[6]   HIGH-POWER HIGH-EFFICIENCY SILICON AVALANCHE DIODES AT ULTRA HIGH FREQUENCIES [J].
PRAGER, HJ ;
CHANG, KKN ;
WEISBROD, S .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (04) :586-+