OBSERVATION OF A (2X8) SURFACE RECONSTRUCTION ON SI1-XGEX ALLOYS GROWN ON (100) SI BY MOLECULAR-BEAM EPITAXY

We present evidence supporting the formation of a new, (2 x 8) surface reconstruction on Si1-xGe(x) alloys grown on (100) Si substrates by molecular-beam epitaxy. Surfaces of Si1-xGe(x) alloys were studied using reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED) techniques. RHEED patterns from samples with Ge concentrations, x, falling within the range 0.10-0.30 and grown at temperatures between 350 and 550-degrees-C, exhibit n/8 fractional-order diffraction streaks in addition to the normal (2 x 1) pattern seen on (100) Si. The presence of fractional-order diffracted beams is indicative of an eight-fold-periodic modulation in electron scattering factor across the alloy surface. LEED patterns from surfaces of samples grown under similar conditions are entirely consistent with these results. In addition, the LEED patterns support the conclusion that the modulation is occurring in the direction of the dimer chains of a (2 x 1) reconstruction. We have examined the thermal stability of the (2 x 8) reconstruction and have found that it reverts to (2 x 1) after annealing to 700-degrees-C and reappears after the sample temperature is allowed to cool below 600-degrees-C. Such behavior suggests that the reconstruction is a stable, ordered phase for which the pair-correlation function of surface Ge atoms exhibits an eightfold periodicity in the "1" direction of a Si-like (2 x 1) reconstruction. We also present a simulation in the kinematic approximation, confirming the validity of our interpretation of these findings.