OBSERVATIONS ON IMPERFECTIONS IN SILICON MATERIAL USING SPREADING RESISTANCE PROBE

被引：6

作者：

GUPTA, DC

CHAN, JY

WANG, P

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 12期

关键词：

D O I：

10.1149/1.2407405

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1611 / &

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[1] Adley J. M., 1969, Semiconductor silicon, P721
[2] ELECTRICAL PROPERTIES OF DISLOCATIONS IN SILICON .2. EFFECTS ON CONDUCTIVITY
GLAENZER, RH
JORDAN, AG
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 259 - &
[3] DETERMINATION OF MOBILITY AND ITS PROFILE IN N/N+ SILICON EPITAXIAL LAYERS
GUPTA, DC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) : 670 - &
[4] GUPTA DC, TO BE PUBLISHED
[5] GUPTA DC, 1970, REV SCI INSTRUM, V41, P176
[6] MICROINHOMOGENEITY PROBLEMS IN SILICON
JOHN, HF
FAUST, JW
STICKLER, R
[J]. IEEE TRANSACTIONS ON PARTS MATERIALS AND PACKAGING, 1966, PMP2 (03): : 51 - &
[7] A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON
MAZUR, RG
DICKEY, DH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 255 - &
[8] RESISTIVITY INHOMOGENEITIES IN SILICON CRYSTALS
MAZUR, RG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 255 - &
[9] MICROPLASMA BREAKDOWN AT STAIR-ROD DISLOCATIONS IN SILICON
QUEISSER, HJ
GOETZBERGER, A
[J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (90): : 1063 - &
[10] SCANNED LASER INFRARED MICROSCOPE
SHERMAN, B
BLACK, JF
[J]. APPLIED OPTICS, 1970, 9 (04) : 802 - +