HEAVY ARSENIC DOPING OF SILICON GROWN BY ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION AT LOW-TEMPERATURES

被引：21

作者：

AGNELLO, PD

SEDGWICK, TO

GOORSKY, MS

COTTE, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期

关键词：

D O I：

10.1063/1.106632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arsenic doping of epitaxial grown Si over the temperature range from 850-degrees-C to 550-degrees-C was investigated in an ultraclean atmospheric-pressure chemical vapor deposition reactor. Growth was carried out from dichlorosilane (DCS) in H-2 carrier gas. Arsenic could be incorporated into single crystal silicon at levels approaching 10 at. %. Carrier concentrations exceeding 1 x 10(20)/cm3 were obtained for the as-grown films. The material remained single-crystalline, as measured by ion channeling and cross-section transmission electron microscopy, and exhibited excellent surface morphology with no Hillock formation observed. AsH3 dramatically enhanced the growth rate of Si at lower temperatures.

引用

页码：454 / 456

页数：3

共 24 条

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