学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
AMBIENT AND DOPANT EFFECTS ON BORON-DIFFUSION IN OXIDES
被引:46
作者
:
WONG, CY
论文数:
0
引用数:
0
h-index:
0
WONG, CY
LAI, FS
论文数:
0
引用数:
0
h-index:
0
LAI, FS
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1986年
/ 48卷
/ 24期
关键词
:
D O I
:
10.1063/1.96846
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1658 / 1660
页数:3
相关论文
共 18 条
[1]
DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON
BARRY, ML
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
BARRY, ML
OLOFSEN, P
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
OLOFSEN, P
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(06)
: 854
-
&
[2]
GLASS SOURCE B DIFFUSION IN SI AND SIO2
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
KENNICOTT, PR
论文数:
0
引用数:
0
h-index:
0
KENNICOTT, PR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(02)
: 293
-
+
[3]
CLEMENS JT, 1974, MAY EL SOC M SAN FRA
[4]
SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON
FROSCH, CJ
论文数:
0
引用数:
0
h-index:
0
FROSCH, CJ
DERICK, L
论文数:
0
引用数:
0
h-index:
0
DERICK, L
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1957,
104
(09)
: 547
-
552
[5]
DIFFUSIVITY SUMMARY OF B, GA, P, AS, AND SB IN SIO2
GHEZZO, M
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GHEZZO, M
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
BROWN, DM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(01)
: 146
-
148
[6]
REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
LEISTIKO, O
论文数:
0
引用数:
0
h-index:
0
LEISTIKO, O
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(09)
: 2695
-
&
[7]
KOOI E, 1965, PHILIPS RES REP, V20, P578
[8]
NGUYEN TN, 1982, 40TH DEV RES C FT CO
[9]
DIFFUSION OF PHOSPHORUS IN SILICON OXIDE FILM
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
SELLO, H
论文数:
0
引用数:
0
h-index:
0
SELLO, H
TREMERE, DA
论文数:
0
引用数:
0
h-index:
0
TREMERE, DA
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1959,
11
(3-4)
: 288
-
298
[10]
STUDIES OF PHOSPHORUS PILE-UP AT THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING
SCHWARZ, SA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
SCHWARZ, SA
BARTON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
BARTON, RW
HO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
HO, CP
HELMS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
HELMS, CR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(05)
: 1101
-
1106
←
1
2
→
共 18 条
[1]
DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON
BARRY, ML
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
BARRY, ML
OLOFSEN, P
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
OLOFSEN, P
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(06)
: 854
-
&
[2]
GLASS SOURCE B DIFFUSION IN SI AND SIO2
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
KENNICOTT, PR
论文数:
0
引用数:
0
h-index:
0
KENNICOTT, PR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(02)
: 293
-
+
[3]
CLEMENS JT, 1974, MAY EL SOC M SAN FRA
[4]
SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON
FROSCH, CJ
论文数:
0
引用数:
0
h-index:
0
FROSCH, CJ
DERICK, L
论文数:
0
引用数:
0
h-index:
0
DERICK, L
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1957,
104
(09)
: 547
-
552
[5]
DIFFUSIVITY SUMMARY OF B, GA, P, AS, AND SB IN SIO2
GHEZZO, M
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GHEZZO, M
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
BROWN, DM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(01)
: 146
-
148
[6]
REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
LEISTIKO, O
论文数:
0
引用数:
0
h-index:
0
LEISTIKO, O
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(09)
: 2695
-
&
[7]
KOOI E, 1965, PHILIPS RES REP, V20, P578
[8]
NGUYEN TN, 1982, 40TH DEV RES C FT CO
[9]
DIFFUSION OF PHOSPHORUS IN SILICON OXIDE FILM
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
SELLO, H
论文数:
0
引用数:
0
h-index:
0
SELLO, H
TREMERE, DA
论文数:
0
引用数:
0
h-index:
0
TREMERE, DA
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1959,
11
(3-4)
: 288
-
298
[10]
STUDIES OF PHOSPHORUS PILE-UP AT THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING
SCHWARZ, SA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
SCHWARZ, SA
BARTON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
BARTON, RW
HO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
HO, CP
HELMS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
HELMS, CR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(05)
: 1101
-
1106
←
1
2
→