CONTROL OF TERRACE WIDTH AND ATOMIC STEP DISTRIBUTION ON VICINAL SI(111) SURFACES BY THERMAL-PROCESSING

被引：25

作者：

OMAHONY, JD

MCGILP, JF

LEIBSLE, FM

WEIGHTMAN, P

FLIPSE, CFJ

机构：

[1] UNIV LIVERPOOL,INTERDISCIPLINARY RES CTR SURFACE SCI,LIVERPOOL L69 3BX,ENGLAND

[2] UNIV LIVERPOOL,DEPT PHYS,LIVERPOOL L69 3BX,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 04期

关键词：

D O I：

10.1088/0268-1242/8/4/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si(111) surfaces misoriented by 4-degrees towards [112] have been studied by scanning tunnelling microscopy. Topographs of surfaces, produced by annealing, followed by rapid quenching, reveal a temperature-dependent transition from a structure consisting of wide irregular terraces separated by small irregular clusters of double steps to a single highly ordered phase of narrow, evenly spaced terraces separated by single monatomic steps. The quenched-in phases are stable at room temperature.

引用

页码：495 / 501

页数：7

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