THEORY AND EXPERIMENT OF THE TEMPERATURE-DEPENDENCE OF GAALAS/GAAS HBTS CHARACTERISTICS FOR POWER-AMPLIFIER APPLICATIONS

被引：7

作者：

BAILBE, JP

ANDRIEUX, L

CAZARRE, A

CAMPS, T

MARTY, A

TASSELLI, J

GRANIER, H

机构：

[1] Laboratoire d'Analyse et d'Architecture des Systèmes, CNRS, 31077 Toulouse Cedex, 7, Avenue du Colonel Roche

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 02期

关键词：

D O I：

10.1016/0038-1101(94)00125-Y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Modelling of thermal effects of GaAlAs/GaAs HBTs d.c. and r.f. characteristics is presented. The thermal resistance value is determined experimentally and introduced in a model. Good agreement between measured results and those from modelling is demonstrated. The r.f. performance shows a good stability at high temperature (f(max) is reduced by about 12% due to temperature rise). For the high signal mode, the simulation of a power amplifier at 3 GHz is also carried out with and without temperature effects.

引用

页码：279 / 286

页数：8

共 9 条

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