GERMANIUM AND SILICON FILM GROWTH BY LOW-ENERGY ION-BEAM DEPOSITION

[1] ION-BEAM DEPOSITION OF THIN FILMS OF DIAMONDLIKE CARBON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) : 2953 - +

[2] THIN-FILM DEPOSITION USING LOW-ENERGY ION-BEAMS .1. SYSTEM SPECIFICATION AND DESIGN [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (02): : 591 - 595

[3] COLLIGON JS, 1976, 28 I PHYS C SER, P357

[4] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &

[5] FLYNT WE, 1961, 3RD P S EL BEAM TECH, P368

[6] LOW-TEMPERATURE EPITAXY OF GE FILMS BY SPUTTER DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 14 - 19

[7] KRIKORIAN E, 1964, SINGLE CRYSTAL FILMS, P113

[8] MANY A, 1965, SEMICONDUCTOR SURFAC, P113

[9] PROBYN BA, 1968, BRIT J APPL PHYS, V1, P457

[10] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +

[1] ION-BEAM DEPOSITION OF THIN FILMS OF DIAMONDLIKE CARBON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) : 2953 - +

[2] THIN-FILM DEPOSITION USING LOW-ENERGY ION-BEAMS .1. SYSTEM SPECIFICATION AND DESIGN [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (02): : 591 - 595

[3] COLLIGON JS, 1976, 28 I PHYS C SER, P357

[4] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &

[5] FLYNT WE, 1961, 3RD P S EL BEAM TECH, P368

[6] LOW-TEMPERATURE EPITAXY OF GE FILMS BY SPUTTER DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 14 - 19

[7] KRIKORIAN E, 1964, SINGLE CRYSTAL FILMS, P113

[8] MANY A, 1965, SEMICONDUCTOR SURFAC, P113

[9] PROBYN BA, 1968, BRIT J APPL PHYS, V1, P457

[10] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +