STATISTICAL METALLURGICAL MODEL FOR ELECTROMIGRATION FAILURE IN ALUMINUM THIN-FILM CCNDUCTORS

[1] DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURE TIME ON LENGTH AND WIDTH OF ALUMINUM THIN-FILM CONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3954 - &

[2] ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2381 - +

[3] BERENBAUM L, 1969 AIME FALL M

[4] ELECTROMIGRATION IN THIN AL FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 485 - &

[5] GRAIN GROWTH IN METALS [J]. ACTA METALLURGICA, 1957, 5 (02): : 97 - 105

[6] GHATE PB, 1967, J APPL PHYS, V11, P14

[7] Handscomb D.C., 1958, CAN J MATH, V10, P85, DOI [10.4153/CJM-1958-010-0, DOI 10.4153/CJM-1958-010-0]

[8] LI JCM, 1961, J APPL PHYS, V32, P3

[9] ROSENBERG R, 1968, PHYS LETTERS, V12, P201

[10] THE EFFECT OF RELATIVE CRYSTAL AND BOUNDARY ORIENTATIONS ON GRAIN BOUNDARY DIFFUSION RATES [J]. ACTA METALLURGICA, 1954, 2 (03): : 419 - 426

[1] DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURE TIME ON LENGTH AND WIDTH OF ALUMINUM THIN-FILM CONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3954 - &

[2] ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2381 - +

[3] BERENBAUM L, 1969 AIME FALL M

[4] ELECTROMIGRATION IN THIN AL FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 485 - &

[5] GRAIN GROWTH IN METALS [J]. ACTA METALLURGICA, 1957, 5 (02): : 97 - 105

[6] GHATE PB, 1967, J APPL PHYS, V11, P14

[7] Handscomb D.C., 1958, CAN J MATH, V10, P85, DOI [10.4153/CJM-1958-010-0, DOI 10.4153/CJM-1958-010-0]

[8] LI JCM, 1961, J APPL PHYS, V32, P3

[9] ROSENBERG R, 1968, PHYS LETTERS, V12, P201

[10] THE EFFECT OF RELATIVE CRYSTAL AND BOUNDARY ORIENTATIONS ON GRAIN BOUNDARY DIFFUSION RATES [J]. ACTA METALLURGICA, 1954, 2 (03): : 419 - 426