THE LATTICE SITES OF CARBON IN HIGHLY DOPED ALAS-C GROWN BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

DAVIDSON, BR

NEWMAN, RC

ROBBIE, DA

SANGSTER, MJL

WAGNER, J

FISCHER, A

PLOOG, K

机构：

[1] UNIV READING,JJ THOMSON PHYS LAB,READING RG6 2AF,BERKS,ENGLAND

[2] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

[3] FRAUNHOFEN INST ANGEW FESTKORPERPHYS,W-7800 FREIBURG,GERMANY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 04期

关键词：

D O I：

10.1088/0268-1242/8/4/022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Infrared absorption measurements of heavily carbon-doped AlAs have revealed a localized vibrational mode at 630 cm-1 which appears as a Fano profile. Raman scattering measurements show a corresponding line at 634 cm-1: possible reasons for the difference in frequency are discussed. The line is assigned to C(As) acceptors and a comparison is made with a two-parameter Keating cluster model. Additional weaker lines at 615 cm-1, 633 cm-1 and 645 cm-1 have been observed in absorption, and possible interpretations have been considered.

引用

页码：611 / 614

页数：4

共 15 条

[1]

ASHWIN MJ, 1993, IN PRESS SEMICOND SC, V8

[2]

ASHWIN MJ, 1993, IN PRESS J APPL PHYS, V73

[3] ABINITIO CALCULATION OF PHONON DISPERSIONS IN SEMICONDUCTORS [J].