SINGLE-ATOM MANIPULATION ON THE SI(111)7X7 SURFACE BY THE SCANNING TUNNELING MICROSCOPE (STM)

被引：41

作者：

UCHIDA, H ^{[1
]}

HUANG, DH ^{[1
]}

YOSHINOBU, J ^{[1
]}

AONO, M ^{[1
]}

机构：

[1] RIKEN, WAKO, SAITAMA 35101, JAPAN

来源：

SURFACE SCIENCE | 1993年 / 287卷

关键词：

D O I：

10.1016/0039-6028(93)91126-A

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Methods to manipulate single Si atoms on the Si(111)7 x 7 surface at room temperature, using a scanning tunneling microscope (STM) operated in ultrahigh vacuum, are reported. The extraction and redeposition of single Si atoms and the displacement of the redeposited Si atoms can be done with a W tip, if the tip is carefully cleaned, by applying a voltage pulse between tip and sample with its polarity, magnitude, and duration being selected appropriately.

引用

页码：1056 / 1061

页数：6

共 12 条

[1]

AONO M, 1991, J CRYSTALLOGR SOC JP, V33, P158

[2] ATOMIC-SCALE SURFACE MODIFICATIONS USING A TUNNELING MICROSCOPE [J].