A CAPACITANCE METHOD TO DETERMINE THE GATE-TO-DRAIN SOURCE OVERLAP LENGTH OF MOSFETS

[1] ASYMMETRICAL CHARACTERISTICS IN LDD AND MINIMUM-OVERLAP MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 16 - 19

[2] CHAN TY, UNPUB IEEE ELECTRON

[3] Hsu F.-C., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P48

[4] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 71 - 74

[5] SUBMICROMETER DEVICE DESIGN FOR HOT-ELECTRON RELIABILITY AND PERFORMANCE [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 350 - 352

[6] Ko P. K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P292

[7] SHEET RESISTANCE-JUNCTION DEPTH RELATIONSHIPS IN IMPLANTED ARSENIC DIFFUSION [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 275 - 277

[8] Mizuno T., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P250

[1] ASYMMETRICAL CHARACTERISTICS IN LDD AND MINIMUM-OVERLAP MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 16 - 19

[2] CHAN TY, UNPUB IEEE ELECTRON

[3] Hsu F.-C., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P48

[4] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 71 - 74

[5] SUBMICROMETER DEVICE DESIGN FOR HOT-ELECTRON RELIABILITY AND PERFORMANCE [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 350 - 352

[6] Ko P. K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P292

[7] SHEET RESISTANCE-JUNCTION DEPTH RELATIONSHIPS IN IMPLANTED ARSENIC DIFFUSION [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 275 - 277

[8] Mizuno T., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P250