INTERNAL PHOTOEMISSION AS A TOOL FOR STUDY OF INSULATORS

[11] PHOTOEMISSION STUDIES ON THIN METAL-INSULATOR-METAL SANDWICHES [J]. PHYSICA STATUS SOLIDI, 1967, 24 (02): : K137 - +

[12] BARRIER LOWERING AND FIELD PENETRATION AT METAL-DIELECTRIC INTERFACES - (AL-SI02 - MOS STRUCTURES - E) [J]. APPLIED PHYSICS LETTERS, 1966, 9 (01) : 53 - &

[13] MOTT NF, 1948, ELECTRONIC PROCESSES

[14] MONTE CARLO CALCULATIONS OF INTERNAL PHOTOEMISSION YIELDS IN M-I-M THIN-FILM STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1791 - &

[15] PHOTOCURRENTS THROUGH THIN FILMS OF AL2O3 [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) : 796 - &

[16] PHOTOEMISSION OF HOLES FROM METALS INTO ANTHRACENE [J]. JOURNAL OF CHEMICAL PHYSICS, 1967, 46 (06) : 2133 - &

[17] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE . EFFECTS OF ION MIGRATION IN OXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1491 - &

[18] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1965, 140 (2A): : A569 - &

[11] PHOTOEMISSION STUDIES ON THIN METAL-INSULATOR-METAL SANDWICHES [J]. PHYSICA STATUS SOLIDI, 1967, 24 (02): : K137 - +

[12] BARRIER LOWERING AND FIELD PENETRATION AT METAL-DIELECTRIC INTERFACES - (AL-SI02 - MOS STRUCTURES - E) [J]. APPLIED PHYSICS LETTERS, 1966, 9 (01) : 53 - &

[13] MOTT NF, 1948, ELECTRONIC PROCESSES

[14] MONTE CARLO CALCULATIONS OF INTERNAL PHOTOEMISSION YIELDS IN M-I-M THIN-FILM STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1791 - &

[15] PHOTOCURRENTS THROUGH THIN FILMS OF AL2O3 [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) : 796 - &

[16] PHOTOEMISSION OF HOLES FROM METALS INTO ANTHRACENE [J]. JOURNAL OF CHEMICAL PHYSICS, 1967, 46 (06) : 2133 - &

[17] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE . EFFECTS OF ION MIGRATION IN OXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1491 - &

[18] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1965, 140 (2A): : A569 - &