STRESS-INDUCED ELECTRICAL-PROPERTIES OF POINT-DEFECTS IN THE SPHALERITE STRUCTURE .1. PIEZOELECTRIC EFFECT

被引:2
作者
BOOYENS, H
VERMAAK, JS
机构
[1] Physics Department, University of Port Elizabeth, Port Elizabeth
关键词
D O I
10.1063/1.326078
中图分类号
O59 [应用物理学];
学科分类号
摘要
It is shown that the stress fields associated with point defects in crystals with the sphalerite structure lead to piezoelectrically induced polarization charge distributions that are symmetric with respect to the {110} planes and antisymmetric with respect to the {001} planes. The electrical contributions to point-defect-point-defect and dislocation-point-defect interactions are discussed.
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页码:1047 / 1049
页数:3
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