STUDY OF STRAIN VARIATION IN LEC-GROWN GAAS BULK CRYSTALS BY SYNCHROTRON RADIATION X-RAY TOPOGRAPHY

被引:8
作者
MATSUI, J
机构
[1] Research and Development Group, NEC Corporation, Tsukuba, 305
关键词
D O I
10.1016/0169-4332(91)90132-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Lattice distortions in LEC-grown semi-insulating GaAs bulk crystals are studied mainly by synchrotron X-ray topography. Besides the macroscopic lattice orientation and lattice parameter variations relating to the dislocation generation by thermal stress after growth, microscopic variation of the lattice parameter in a single cell is observed, which may be intrinsic due to some interaction of excess arsenic atoms with the entangled dislocations forming the cell walls.
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页码:1 / 8
页数:8
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