BLUE-GREEN ZNSE-ZNCDSE LIGHT-EMITTING-DIODES AND PHOTOPUMPED LASER STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON ZNSE SUBSTRATES

被引:12
作者
REN, J
EASON, DB
YU, Z
SNEED, B
COOK, JW
SCHETZINA, JF
ELMASRY, NA
YANG, XH
SONG, JJ
CANTWELL, G
HARSH, WC
机构
[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
[2] OKLAHOMA STATE UNIV,CTR LASER RES,STILLWATER,OK 74078
[3] EAGLE PICHER RES LAB,MIAMI,OK 74354
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期
关键词
D O I
10.1116/1.587017
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The first ZnSe-ZnCdSe double-heterostructure light-emitting diodes (LEDs) and photopumped laser structures on ZnSe substrates have been successfully grown by molecular beam epitaxy. The LEDs emit bright blue/green electroluminescence at room temperature, with the emission peak centered at 492 nm. Photopumped laser emission was also observed from ZnSe-ZnCdSe multiple-quantum-well structures grown on ZnSe substrates. The cleaved-cavity devices display stimulated emission in the deep-blue spectral region near 477 nm at 10 K and at 478.8 nm at 80 K.
引用
收藏
页码:1262 / 1265
页数:4
相关论文
共 9 条
[1]   GROWTH AND CHARACTERIZATION OF SUBSTRATE-QUALITY ZNSE SINGLE-CRYSTALS USING SEEDED PHYSICAL VAPOR TRANSPORT [J].
CANTWELL, G ;
HARSCH, WC ;
COTAL, HL ;
MARKEY, BG ;
MCKEEVER, SWS ;
THOMAS, JE .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (06) :2931-2936
[2]   SUBSTRATE-QUALITY, SINGLE-CRYSTAL ZNSE FOR HOMOEPITAXY USING SEEDED PHYSICAL VAPOR TRANSPORT [J].
COTAL, HL ;
MARKEY, BG ;
MCKEEVER, SWS ;
CANTWELL, G ;
HARSCH, WC .
PHYSICA B, 1993, 185 (1-4) :103-108
[3]   IMPROVED OHMIC CONTACTS FOR P-TYPE ZNSE AND RELATED P-ON-N DIODE STRUCTURES [J].
LANSARI, Y ;
REN, J ;
SNEED, B ;
BOWERS, KA ;
COOK, JW ;
SCHETZINA, JF .
APPLIED PHYSICS LETTERS, 1992, 61 (21) :2554-2556
[4]   GROWTH OF HGSE AND HG1-XCDXSE THIN-FILMS BY MOLECULAR-BEAM EPITAXY [J].
LANSARI, Y ;
COOK, JW ;
SCHETZINA, JF .
JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (08) :809-813
[5]   ZNSE HOMO-EPITAXIAL GROWTH BY MOLECULAR-BEAM EPITAXY [J].
MENDA, K ;
TAKAYASU, I ;
MINATO, T ;
KAWASHIMA, M .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :342-347
[6]   HOMO-EPITAXIAL GROWTH OF ZNSE BY MBE [J].
OHISHI, M ;
OHMORI, K ;
FUJII, Y ;
SAITO, H ;
TIONG, S .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :324-328
[7]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF P-TYPE AND N-TYPE ZNSE HOMOEPITAXIAL LAYERS [J].
OHKAWA, K ;
UENO, A ;
MITSUYU, T .
JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :375-384
[8]   BLUE-GREEN LIGHT-EMITTING-DIODES AND LASER-DIODES BASED ON II-VI HETEROSTRUCTURES GROWN ON PREDEPOSITED GAAS BUFFER LAYERS [J].
REN, J ;
EASON, DB ;
LANSARI, Y ;
YU, Z ;
BOWERS, KA ;
BONEY, C ;
SNEED, B ;
COOK, JW ;
SCHETZINA, JF ;
KOCH, MW ;
WICKS, GW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :955-957
[9]   ROOM-TEMPERATURE BLUE-LIGHT EMITTING P-N DIODES FROM ZN(S,SE)-BASED MULTIPLE QUANTUM-WELL STRUCTURES [J].
XIE, W ;
GRILLO, DC ;
GUNSHOR, RL ;
KOBAYASHI, M ;
JEON, H ;
DING, J ;
NURMIKKO, AV ;
HUA, GC ;
OTSUKA, N .
APPLIED PHYSICS LETTERS, 1992, 60 (16) :1999-2001