EFFECTS OF DEPOSITION METHODS ON THE PROPERTIES OF SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS

被引：10

作者：

HIRAO, T

KITAGAWA, M

KAMADA, T

TSUKAMOTO, K

YOSHIOKA, Y

KURAMASU, K

KORECHIKA, T

WASA, K

机构：

[1] MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN

[2] MATSUSHITA ELECT COMPONENTS CO LTD,RES & DEV LAB,KADOMA,OSAKA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 09期

关键词：

D O I：

10.1143/JJAP.27.1609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1609 / 1615

页数：7

共 5 条

[1] HYDROGEN CONCENTRATION AND BOND CONFIGURATIONS IN SILICON-NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD [J].

HIRAO, T ;

SETSUNE, K ;

KITAGAWA, M ;

KAMADA, T ;

WASA, K ;

TSUKAMOTO, K ;

IZUMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (01) :30-34

[2] PROPERTIES OF SILICON OXYNITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD [J].

HIRAO, T ;

SETSUNE, K ;

KITAGAWA, M ;

KAMADA, T ;

OHMURA, T ;

WASA, K ;

IZUMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01) :L21-L23

[3] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA [J].

MATSUO, S ;

KIUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04) :L210-L212

[4]

Sun R. C., 1980, 18th Annual Proceedings of Reliability Physics, P244, DOI 10.1109/IRPS.1980.362948

[5]

TAKASAKI K, 1980, ELECTROCHEMICAL SOC, V80, P767

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