SOURCE OF RADIATION-DAMAGE TO MOS DEVICES DURING S-GUN METALLIZATION

被引：16

作者：

VOSSEN, JL

ONEILL, JJ

HUGHES, GW

TAFT, FA

SNEDEKER, R

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 01期

关键词：

D O I：

10.1116/1.570465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：400 / 402

页数：3

共 10 条

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[10] APPLICATION OF HIGH-RATE EXB OR MAGNETRON SPUTTERING IN METALLIZATION OF SEMICONDUCTOR-DEVICES [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :157-164

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