POST-GATE PLASMA AND SPUTTER PROCESS EFFECTS ON RADIATION HARDNESS OF METAL GATE CMOS INTEGRATED-CIRCUITS

被引：10

作者：

ANDERSON, RE

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/TNS.1978.4329553

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1459 / 1464

页数：6

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