APPLICATION OF HIGH-RATE EXB OR MAGNETRON SPUTTERING IN METALLIZATION OF SEMICONDUCTOR-DEVICES

被引：41

作者：

WILSON, RW ^{[1
]}

TERRY, LE ^{[1
]}

机构：

[1] MOTOROLA INC,SEMICOND PROD DIV,5005 E MCDOWELL RD,PHOENIX,AZ 85008

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.568813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：157 / 164

页数：8

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[5] GAYDOU VF, 1966, VAK TECH, P161
[6] HERMAN DS, 1973, ELECTROCHEM SOC, P385
[7] DEGRADATION OF OXIDE-FILMS DUE TO RADIATION EFFECTS IN EXPOSURE TO PLASMAS IN SPUTTER DEPOSITION AND BACKSPUTTERING
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[J]. PROCEEDINGS OF THE IEEE, 1974, 62 (09) : 1236 - 1241
[8] SKOW K, 1971, FEB IC PROC PROD C P
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