A NOVEL OPTICAL LITHOGRAPHY TECHNIQUE USING THE PHASE-SHIFTER FRINGE

被引:18
作者
TANAKA, T
UCHINO, S
HASEGAWA, N
YAMANAKA, T
TERASAWA, T
OKAZAKI, S
机构
[1] Hitachi Limited, Central Research Laboratory, Kokubunji, Tokyo
[2] Autumn Meeting of the Japan, Society of Applied Physics, Morioka
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 05期
关键词
OPTICAL LITHOGRAPHY; I-LINE; OPTIMA; PHASE SHIFTER; PHASE-SHIFTING LITHOGRAPHY; NEGATIVE RESIST; LITHOGRAPHY; RESOLUTION; EXPOSURE; FOCUS LATITUDE;
D O I
10.1143/JJAP.30.1131
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new optical lithography technique called outline pattern transfer imaging (OPTIMA) is described. OPTIMA utilizes an optical phase change at a clear phase-shifter pattern edge. Very narrow closed patterns can be delineated along the fringe of the phase-shifter pattern by this method. The resolution limitation of OPTIMA is presented using a newly developed high-resolution i-line negative resist. The resist is transparent (90% at 0.5-mu-m thickness) and has a high gamma-value (4.5). Results show that 0.13-mu-m-wide groove patterns can be delineated with an i-line stepper having 0.42 numerical aperture. Practical focus latitude and exposure latitude are obtained for 0.2-mu-m patterns. In OPTIMA, linewidth control is also possible by adding notch patterns at the shifter edge.
引用
收藏
页码:1131 / 1136
页数:6
相关论文
共 14 条
[1]   A NEW METHOD FOR ENHANCING FOCUS LATITUDE IN OPTICAL LITHOGRAPHY - FLEX [J].
FUKUDA, H ;
HASEGAWA, N ;
TANAKA, T ;
HAYASHIDA, T .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) :179-180
[2]  
GREENEEICH J, 1989, 1989 P SPIE SAN JOS, V1088, P194
[3]   CONTRAST ENHANCED PHOTOLITHOGRAPHY [J].
GRIFFING, BF ;
WEST, PR .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (01) :14-16
[4]  
HASEGAWA N, 1990, DENKI KAGAKU, V58, P330
[5]   IMPROVING RESOLUTION IN PHOTOLITHOGRAPHY WITH A PHASE-SHIFTING MASK [J].
LEVENSON, MD ;
VISWANATHAN, NS ;
SIMPSON, RA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) :1828-1836
[6]  
LIN BJ, 1983, SOLID STATE TECHNOL, V5, P105
[7]  
POL V, 1986, P SOC PHOTO-OPT INS, V633, P6
[8]  
PROUTY MD, 1984, P SOC PHOTO-OPT INST, V470, P228, DOI 10.1117/12.941921
[9]   EFFECTS OF LIGHT-ABSORPTION IN THE RESIST LAYER IN OPTICAL LITHOGRAPHY [J].
TANAKA, T ;
FUKUDA, H ;
HASEGAWA, N ;
HASHIMOTO, M ;
OKAZAKI, S ;
KOIBUCHI, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02) :188-190
[10]  
TERASAWA T, 1989, P SOC PHOTO-OPT INS, V1088, P25, DOI 10.1117/12.953131