CONDUCTANCE OF P-I-N JUNCTIONS AT HIGH MICROWAVE FIELDS

[1] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[2] SILICON PIN DIODE AS MICROWAVE RADAR PROTECTOR AT MEGAWATT LEVELS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (02) : 53 - &

[3] MEASUREMENT OF HIGH-FIELD CARRIER DRIFT VELOCITIES IN SILICON BY A TIME-OF-FLIGHT TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 38 - +

[4] ROSE FWG, 1957, J ELECTRON CONTR, V3, P3

[5] NEGLECTING DIFFUSION IN SPACE-CHARGE-LIMITED CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 841 - +

[6] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592

[7] UHLIR, 1958, P IRE, V45, P1099

[8] EVALUATION OF DOPING PROFILES FROM CAPACITANCE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (04) : 397 - +

[9] COMPUTER CALCULATION OF IONISATION RATES IN SILICON FOR A DIFFUSED JUNCTION [J]. ELECTRONICS LETTERS, 1967, 3 (10) : 469 - +

[1] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[2] SILICON PIN DIODE AS MICROWAVE RADAR PROTECTOR AT MEGAWATT LEVELS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (02) : 53 - &

[3] MEASUREMENT OF HIGH-FIELD CARRIER DRIFT VELOCITIES IN SILICON BY A TIME-OF-FLIGHT TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 38 - +

[4] ROSE FWG, 1957, J ELECTRON CONTR, V3, P3

[5] NEGLECTING DIFFUSION IN SPACE-CHARGE-LIMITED CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 841 - +

[6] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592

[7] UHLIR, 1958, P IRE, V45, P1099

[8] EVALUATION OF DOPING PROFILES FROM CAPACITANCE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (04) : 397 - +

[9] COMPUTER CALCULATION OF IONISATION RATES IN SILICON FOR A DIFFUSED JUNCTION [J]. ELECTRONICS LETTERS, 1967, 3 (10) : 469 - +