COMPUTER CALCULATION OF IONISATION RATES IN SILICON FOR A DIFFUSED JUNCTION

被引：4

作者：

VANOVERSTRAETEN, R

DEMAN, H

机构：

来源：

ELECTRONICS LETTERS | 1967年 / 3卷 / 10期

关键词：

D O I：

10.1049/el:19670372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：469 / +

页数：1

共 9 条

[1] NOISE AND IONIZATION RATE MEASUREMENTS IN SILICON PHOTODIODES [J].

BAERTSCH, RD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) :987-&

[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[3] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J].

CHYNOWETH, AG .

PHYSICAL REVIEW, 1958, 109 (05) :1537-1540

[4] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS [J].

HAITZ, RH ;

GOETZBERGER, A ;

SCARLETT, RM ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1581-&

[5] AVALANCHE BREAKDOWN OF DIFFUSED SILICON P-N JUNCTIONS [J].

KOKOSA, RA ;

DAVIES, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) :874-+

[6] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

LEE, CA ;

KLEIMACK, JJ ;

BATDORF, RL ;

WIEGMANN, W ;

LOGAN, RA .

PHYSICAL REVIEW, 1964, 134 (3A) :A761-+

[7] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J].

MOLL, JL ;

VANOVERSTRAETEN, R .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :147-157

[8] EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS [J].

SZE, SM ;

GIBBONS, G .

SOLID-STATE ELECTRONICS, 1966, 9 (09) :831-&

[9] LIMITATIONS AND POSSIBILITIES FOR IMPROVEMENT OF PHOTOVOLTAIC SOLAR ENERGY CONVERTERS .1. CONSIDERATIONS FOR EARTHS SURFACE OPERATION [J].

WOLF, M .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (07) :1246-1263

← 1 →