STRUCTURAL STUDY OF TIN AND CARBON COIMPLANTED SILICON

被引：6

作者：

MEI, P ^{[1
]}

SCHMIDT, MT ^{[1
]}

YANG, ES ^{[1
]}

WILKENS, BJ ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 12期

关键词：

D O I：

10.1063/1.347410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The alloy system Si(x)(Sn(y)C1-y)1-x was investigated. The purpose is to form material with reduced strain at silicon heterojunctions. In this work, samples were prepared by coimplantation of tin and carbon ions into silicon wafers within the dosage range 10(15)-10(16) cm-2, followed by rapid thermal annealing. Rutherford backscattering and channeling, Auger sputter profiling, and secondary-ion-mass spectrometry were employed to study the crystallinity, chemical composition, and depth profiles. A near-perfect crystallinity for 0.5 at. % of tin and carbon was achieved. For high-dose implanted samples, tin segregation was observed. This work demonstrates promising features of group-IV semiconductor synthesis by ion implantation.

引用

收藏

页码：8417 / 8419

页数：3

相关论文

共 9 条

[1] A STUDY OF CARBON-IMPLANTED SILICON FOR LIGHT-EMITTING DIODE FABRICATION [J].

CANHAM, LT ;

DYBALL, MR ;

BARRACLOUGH, KG .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4) :95-99

[2] AMORPHOUS HYDROGENATED SILICON-CARBON-TIN ALLOY-FILMS [J].

DEMICHELIS, F ;

KANIADAKIS, G ;

TAGLIAFERRO, A ;

TRESSO, E ;

RAVA, P .

PHYSICAL REVIEW B, 1988, 37 (03) :1231-1235

[3] HIGHLY ACTIVATED SHALLOW GA PROFILES IN SILICON OBTAINED BY IMPLANTATION AND RAPID THERMAL ANNEALING [J].

HARRISON, HB ;

IYER, SS ;

SAIHALASZ, GA ;

COHEN, SA .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :992-994

[4]

MPAWENAYO P, 1987, MATER RES SOC S P, V97, P307

[5] 75-GHZ FT SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

PATTON, GL ;

COMFORT, JH ;

MEYERSON, BS ;

CRABBE, EF ;

SCILLA, GJ ;

DEFRESART, E ;

STORK, JMC ;

SUN, JYC ;

HARAME, DL ;

BURGHARTZ, JN .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (04) :171-173

[6] AMORPHOUS-TO-POLYCRYSTALLINE PHASE-TRANSFORMATIONS IN SN-IMPLANTED SILICON [J].

THORNTON, RP ;

ELLIMAN, RG ;

WILLIAMS, JS .

JOURNAL OF MATERIALS RESEARCH, 1990, 5 (05) :1003-1012

[7] GALLIUM DISTRIBUTION AND ELECTRICAL ACTIVATION IN GA+-IMPLANTED SI [J].

TSAI, MY ;

STREETMAN, BG ;

DELINE, VR ;

EVANS, CA .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (02) :111-126

[8] STRUCTURE AND SHORT-RANGE ORDER OF VAPOUR-DEPOSITED SI1-XSNX AMORPHOUS-ALLOYS [J].

VERGNAT, M ;

PIECUCH, M ;

MARCHAL, G ;

GERL, M .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (03) :327-336

[9]

Ziegler J. F., 1985, STOPPING RANGE IONS