HIGHLY ACTIVATED SHALLOW GA PROFILES IN SILICON OBTAINED BY IMPLANTATION AND RAPID THERMAL ANNEALING

被引：19

作者：

HARRISON, HB ^{[1
]}

IYER, SS ^{[1
]}

SAIHALASZ, GA ^{[1
]}

COHEN, SA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期

关键词：

D O I：

10.1063/1.98786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：992 / 994

页数：3

共 10 条

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