ELECTRICAL AND BACKSCATTERING STUDIES OF THERMALLY ANNEALED GALLIUM IMPLANTED SILICON

被引：5

作者：

ARORA, BM

CASTILLO, JM

KURUP, MB

SHARMA, RP

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1982年 / 63卷 / 1-4期

关键词：

D O I：

10.1080/00337578208222824

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：47 / 54

页数：8

共 17 条

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[7] ENHANCED DIFFUSION AND LATTICE LOCATION OF INDIUM AND GALLIUM IMPLANTED IN SILICON [J].

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[8]

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[9] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

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[10]

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