A STUDY OF CARBON-IMPLANTED SILICON FOR LIGHT-EMITTING DIODE FABRICATION

[1] EFFECT OF CARBON ON LATTICE PARAMETER OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4365 - &

[2] BRICE DK, 1975, ION IMPLANTATION RAN, V1

[3] Burenkov A.F., 1986, TABLES ION IMPLANTAT

[4] 1.3-MU-M LIGHT-EMITTING DIODE FROM SILICON ELECTRON-IRRADIATED AT ITS DAMAGE THRESHOLD [J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1509 - 1511

[5] CULLIS AG, 1981, SEMICONDUCTOR SILICO, V81, P518

[6] ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 182 - 184

[7] GIBBONS JF, 1975, PROJECTED RANGE STAT

[8] A SYSTEMATIC ANALYSIS OF DEFECTS IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (01): : 1 - 34

[9] MIGRATION OF IMPLANTED INDIUM IN SILICON AS A FUNCTION OF THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 575 - 577

[10] TRANSMISSION ELECTRON-MICROSCOPY OF ALUMINUM IMPLANTED AND ANNEALED (100) SI - DIRECT EVIDENCE OF ALUMINUM PRECIPITATE FORMATION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (18) : 1169 - 1171

[1] EFFECT OF CARBON ON LATTICE PARAMETER OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4365 - &

[2] BRICE DK, 1975, ION IMPLANTATION RAN, V1

[3] Burenkov A.F., 1986, TABLES ION IMPLANTAT

[4] 1.3-MU-M LIGHT-EMITTING DIODE FROM SILICON ELECTRON-IRRADIATED AT ITS DAMAGE THRESHOLD [J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1509 - 1511

[5] CULLIS AG, 1981, SEMICONDUCTOR SILICO, V81, P518

[6] ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 182 - 184

[7] GIBBONS JF, 1975, PROJECTED RANGE STAT

[8] A SYSTEMATIC ANALYSIS OF DEFECTS IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (01): : 1 - 34

[9] MIGRATION OF IMPLANTED INDIUM IN SILICON AS A FUNCTION OF THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 575 - 577

[10] TRANSMISSION ELECTRON-MICROSCOPY OF ALUMINUM IMPLANTED AND ANNEALED (100) SI - DIRECT EVIDENCE OF ALUMINUM PRECIPITATE FORMATION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (18) : 1169 - 1171