SUPERCOMPUTER IMAGES OF ELECTRON DEVICE PHYSICS

被引：6

作者：

HESS, K

机构：

[1] UNIV ILLINOIS,NATL CTR SUPERCOMP APPLICAT,URBANA,IL 61801

[2] NATL SCI FDN,NATL CTR COMP ELECTR,URBANA,IL

来源：

PHYSICS TODAY | 1990年 / 43卷 / 02期

关键词：

D O I：

10.1063/1.881223

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

[No abstract available]

引用

页码：34 / 42

页数：9

共 26 条

[1] BAND-GAP ENGINEERING - FROM PHYSICS AND MATERIALS TO NEW SEMICONDUCTOR-DEVICES [J].

CAPASSO, F .

SCIENCE, 1987, 235 (4785) :172-176

[2]

Capasso F., 1987, HETEROJUNCTION BAND

[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[4]

FERRY DK, 1980, PHYSICS NONLINEAR TR

[5] MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS [J].

FISCHETTI, MV ;

LAUX, SE .

PHYSICAL REVIEW B, 1988, 38 (14) :9721-9745

[6]

GRIBNIKOV ZS, 1973, SOV PHYS SEMICOND+, V6, P1204

[7]

GRUBIN HL, 1982, PHYSICS SUBMICRON ST

[8] DIRECT OBSERVATION OF BALLISTIC TRANSPORT IN GAAS [J].

HEIBLUM, M ;

NATHAN, MI ;

THOMAS, DC ;

KNOEDLER, CM .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2200-2203

[9] THEORY AND APPLICATIONS OF NEAR BALLISTIC TRANSPORT IN SEMICONDUCTORS [J].

HESS, K ;

IAFRATE, GJ .

PROCEEDINGS OF THE IEEE, 1988, 76 (05) :519-532

[10] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER [J].

HESS, K ;

MORKOC, H ;

SHICHIJO, H ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1979, 35 (06) :469-471

← 1 2 3 →