DEEP LEVELS IN SUPERLATTICES

被引：9

作者：

DOW, JD ^{[1
]}

REN, SY ^{[1
]}

SHEN, J ^{[1
]}

HONG, RD ^{[1
]}

WANG, RP ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS & ASTRON,TEMPE,AZ 85287

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 08期

关键词：

Deep impurity levels; superlattices;

D O I：

10.1007/BF02651393

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The physics governing deep levels in superlattices and quantum wells is elucidated, with emphasis on the importance of shallow-deep transitions caused by a band edge passing through a deep level, and the accompanying change in doping character of the impurity. © 1990 The Mineral,Metal & Materials Society,Inc.

引用

页码：829 / 835

页数：7

共 18 条

[1] SHALLOW-DEEP CORE-EXCITON INSTABILITY IN SIXGE1-X ALLOYS [J].

BUNKER, BA ;

HULBERT, SL ;

STOTT, JP ;

BROWN, FC .

PHYSICAL REVIEW LETTERS, 1984, 53 (22) :2157-2160

[2]

DOW JD, IN PRESS PROPOSED EX

[3]

DOW JD, INTERFACES SUPERLATT

[4]

DOW JD, 1989, PROGR ELECTRONIC PRO

[5]

DOW JD, 1988, NATO ADV SCI I SER B, V183, P175

[6]

Hjalmarson H. P., COMMUNICATION

[7] THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J].

HJALMARSON, HP ;

VOGL, P ;

WOLFORD, DJ ;

DOW, JD .

PHYSICAL REVIEW LETTERS, 1980, 44 (12) :810-813

[8] DOPING ZN1-XMNXSE N-TYPE [J].

HONG, RD ;

DOW, JD .

APPLIED PHYSICS LETTERS, 1989, 54 (25) :2597-2598

[9]

HONG RD, 1987, MATERIALS RES SOC S, V77, P545

[10] NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE [J].

HSU, WY ;

DOW, JD ;

WOLFORD, DJ ;

STREETMAN, BG .

PHYSICAL REVIEW B, 1977, 16 (04) :1597-1615

← 1 2 →