ELECTRON SPIN RESONANCE STUDY OF REACTIVELY EVAPORATED SILICON OXIDE

被引：34

作者：

TIMSON, PA

HOGARTH, CA

机构：

来源：

THIN SOLID FILMS | 1971年 / 8卷 / 04期

关键词：

D O I：

10.1016/0040-6090(71)90016-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：237 / &

共 15 条

[1] DIELECTRIC PROPERTIES OF REACTIVELY EVAPORATED SILICON MONOXIDE [J].

ANASTASIO, TA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (02) :333-+

[2] DIELECTRIC PROPERTIES OF THIN FILMS OF ALUMINIUM OXIDE AND SILICON OXIDE [J].

ARGALL, F ;

JONSCHER, AK .

THIN SOLID FILMS, 1968, 2 (03) :185-&

[3]

BOREL JP, 1959, HELV PHYS ACTA, V32, P448

[4] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].

BRODSKY, MH ;

TITLE, RS .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&

[5]

CALLARD LR, 1966, P IERE IEE C APPLICA

[6]

CORNAZ P, 1965, 1964 P INT C PHYS NO, P207

[7]

DITINA ZZ, 1969, SOV PHYS SEMICOND+, V2, P1006

[8] ELECTRICAL CONDUCTION IN SILICON MONOXIDE FILMS [J].

HILL, AE ;

PHAHLE, AM ;

CALDERWOOD, JH .

THIN SOLID FILMS, 1970, 5 (5-6) :287-+

[9]

HOLLAND L, 1956, VACUUM DEPOSITION TH, P516

[10] CHARGE STORAGE IN EVAPORATED SILICON OXIDE FILMS [J].

HOWSON, RP ;

TAYLOR, A .

THIN SOLID FILMS, 1970, 6 (01) :31-&

← 1 2 →