DIELECTRIC PROPERTIES OF REACTIVELY EVAPORATED SILICON MONOXIDE

被引：3

作者：

ANASTASIO, TA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1969年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.1492686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：333 / +

页数：1

共 16 条

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APPLIED OPTICS, 1965, 4 (08) :971-+

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HASS, C .

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[4]

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[5] ELECTRICAL CONDUCTION THROUGH SIO FILMS [J].

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BLAIR, JC ;

BAUER, R .

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[6] OPTICAL PROPERTIES OF SILICON MONOXIDE IN THE WAVELENGTH REGION FROM 0.24 TO 14.0 MICRONS [J].

HASS, G ;

SALZBERG, CD .

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[7]

HIROSE H, 1964, JPN J APPL PHYS, V3, P179

[8] ELECTRICAL CONDUCTIVITY IN EVAPORATED SILICON OXIDE FILMS [J].

JOHANSEN, IT .

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[9]

LAFFERTY JM, 1961, SCIENTIFIC F VACU ED, P15

[10]

PREUSS LE, 1961, 8 T NAT VAC S ED, P947

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