TITANIUM CARBIDE RECTIFYING CONTACTS ON BORON-DOPED POLYCRYSTALLINE DIAMOND

被引：9

作者：

TACHIBANA, T

GLASS, JT

THOMPSON, DG

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[2] KOBE STEEL USA INC,CTR ELECTR MAT,RES TRIANGLE PK,NC 27709

来源：

DIAMOND AND RELATED MATERIALS | 1993年 / 2卷 / 01期

关键词：

D O I：

10.1016/0925-9635(93)90139-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

TiC contacts on B-doped polycrystalline diamond were studied. The as-deposited TiC formed rectifying contacts with a reverse leakage current of 0.4 muA at 5 V. After the contacts had been annealed at 850-degrees-C at a vacuum of approximately 1 x 10(-8) Torr, the current-voltage (I-V) characteristics of the contacts changed little and the rectifying nature was retained. The primary observable change was that the leakage current at 5 V reverse bias increased from 0.4 to 0.7 muA. The thermal stability of the rectifying contacts was attributed to the chemically non-reactive interface between the diamond and TiC.

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页码：37 / 40

页数：4

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