HOT-ELECTRON LUMINESCENCE IN ALSB

被引：7

作者：

MAAREF, M

CHARFI, FF

ZOUAGHI, M

LAGUILLAUME, CBA

JOULLIE, A

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES LAB,F-75251 PARIS 05,FRANCE

[2] UNIV MONTPELLIER 2,CTR ELECTR SOLIDES,F-34060 MONTPELLIER,FRANCE

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.34.8650

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8650 / 8655

页数：6

共 28 条

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[9] BAND-STRUCTURE DETERMINATION OF GAAS FROM HOT-ELECTRON LUMINESCENCE [J].

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[10] ANALYSIS OF THE ALSB OXIDE-SEMICONDUCTOR INTERFACE USING AUGER SPECTROMETRY AND RAMAN-SCATTERING [J].

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