BAND-STRUCTURE DETERMINATION OF GAAS FROM HOT-ELECTRON LUMINESCENCE

被引:46
作者
FASOL, G
HUGHES, HP
机构
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 04期
关键词
D O I
10.1103/PhysRevB.33.2953
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:2953 / 2956
页数:4
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共 17 条
[1]   A TETRAHEDRON METHOD FOR DOUBLY CONSTRAINED BRILLOUIN-ZONE INTEGRALS - APPLICATION TO SILICON OPTIC PHONON DECAY [J].
ALLEN, PB .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 120 (02) :529-538
[2]  
Altarelli M., 1980, Journal of the Physical Society of Japan, V49, P169
[3]   INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].
ASHEN, DJ ;
DEAN, PJ ;
HURLE, DTJ ;
MULLIN, JB ;
WHITE, AM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053
[4]   CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].
CASEY, HC ;
STERN, F .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643
[5]   PHOTOEMISSION FROM ACTIVATED GALLIUM-ARSENIDE .1. VERY-HIGH-RESOLUTION ENERGY-DISTRIBUTION CURVES [J].
DROUHIN, HJ ;
HERMANN, C ;
LAMPEL, G .
PHYSICAL REVIEW B, 1985, 31 (06) :3859-3871
[6]   PHOTOEMISSION FROM ACTIVATED GALLIUM-ARSENIDE .2. SPIN POLARIZATION VERSUS KINETIC-ENERGY ANALYSIS [J].
DROUHIN, HJ ;
HERMANN, C ;
LAMPEL, G .
PHYSICAL REVIEW B, 1985, 31 (06) :3872-3886
[7]  
DYAKONOV MI, 1977, SOV PHYS SEMICOND+, V11, P801
[8]   LUMINESCENCE FROM HOT-ELECTRONS RELAXING BY LO PHONON EMISSION IN P-GAAS AND GAAS DOPING SUPERLATTICES [J].
FASOL, G ;
PLOOG, K ;
BAUSER, E .
SOLID STATE COMMUNICATIONS, 1985, 54 (05) :383-387
[9]   HOT PHOTOLUMINESCENCE IN BERYLLIUM-DOPED GALLIUM-ARSENIDE [J].
IMHOFF, EA ;
BELL, MI ;
FORMAN, RA .
SOLID STATE COMMUNICATIONS, 1985, 54 (10) :845-848
[10]   HOT-ELECTRON PHOTO-LUMINESCENCE IN GAAS CRYSTALS [J].
MIRLIN, DN ;
KARLIK, IJ ;
NIKITIN, LP ;
RESHINA, II ;
SAPEGA, VF .
SOLID STATE COMMUNICATIONS, 1981, 37 (09) :757-760