PHOTOTHERMAL WAVE IMAGING OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR STRUCTURES

被引:36
作者
MANDELIS, A
WILLIAMS, A
SIU, EKM
机构
关键词
D O I
10.1063/1.340468
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:92 / 98
页数:7
相关论文
共 17 条
[1]   PHOTOACOUSTIC-SPECTROSCOPY OF THIN SIO2-FILMS GROWN ON (100) CRYSTALLINE SI SUBSTRATES - A THERMAL INTERFEROMETRIC-TECHNIQUE COMPLEMENTARY TO OPTICAL INTERFEROMETRY [J].
MANDELIS, A ;
SIU, E ;
HO, S .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (03) :153-159
[2]   PHOTOACOUSTIC SIGNAL CHANGES ASSOCIATED WITH VARIATIONS IN SEMICONDUCTOR CRYSTALLINITY [J].
MCCLELLAND, JF ;
KNISELEY, RN .
APPLIED PHYSICS LETTERS, 1979, 35 (08) :585-587
[3]  
MCDONALD FA, 1986, IBM RC12121 RES REP
[4]   PHOTOACOUSTIC MEASUREMENTS OF ION-IMPLANTED AND LASER-ANNEALED GAAS [J].
MCFARLANE, RA ;
HESS, LD .
APPLIED PHYSICS LETTERS, 1980, 36 (02) :137-139
[5]   THERMAL-WAVE DETECTION AND THIN-FILM THICKNESS MEASUREMENTS WITH LASER-BEAM DEFLECTION [J].
OPSAL, J ;
ROSENCWAIG, A ;
WILLENBORG, DL .
APPLIED OPTICS, 1983, 22 (20) :3169-3176
[6]   THERMAL-WAVE DEPTH PROFILING - THEORY [J].
OPSAL, J ;
ROSENCWAIG, A .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4240-4246
[7]   TEMPORAL BEHAVIOR OF MODULATED OPTICAL REFLECTANCE IN SILICON [J].
OPSAL, J ;
TAYLOR, MW ;
SMITH, WL ;
ROSENCWAIG, A .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) :240-248
[8]   THERMAL AND PLASMA-WAVE DEPTH PROFILING IN SILICON [J].
OPSAL, J ;
ROSENCWAIG, A .
APPLIED PHYSICS LETTERS, 1985, 47 (05) :498-500
[9]  
Rosenberg J. K., 1982, Behaviour and Information Technology, V1, P371, DOI 10.1080/01449298208914460
[10]   DETECTION OF THERMAL WAVES THROUGH OPTICAL REFLECTANCE [J].
ROSENCWAIG, A ;
OPSAL, J ;
SMITH, WL ;
WILLENBORG, DL .
APPLIED PHYSICS LETTERS, 1985, 46 (11) :1013-1015