GROWTH AND STRUCTURE OF ALUMINUM FILMS ON (001) SILICON-CARBIDE

[1] SURFACE MODIFICATION STRATEGIES FOR (100)3C-SIC [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1692 - 1695

[2] AUGER AND ELECTRON ENERGY-LOSS STUDY OF THE PD/SIC INTERFACE AND ITS DEPENDENCE ON OXIDATION [J]. APPLICATIONS OF SURFACE SCIENCE, 1983, 17 (01): : 12 - 22

[3] AUGER AND ELECTRON ENERGY-LOSS STUDY OF THE AL/SIC INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 70 - 72

[4] ELECTRON-STIMULATED DESORPTION OF POSITIVE-IONS FROM HEXAGONAL ALPHA-SIC [J]. SURFACE SCIENCE, 1986, 173 (01) : 234 - 244

[5] Briggs D., 1983, PRACTICAL SURFACE AN

[6] REDUCTION OF SILICON-ALUMINUM INTERDIFFUSION BY IMPROVED SEMICONDUCTOR SURFACE ORDERING [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 110 - 112

[7] PHOTOEMISSION-STUDIES OF ATOMIC REDISTRIBUTION AT GOLD-SILICON AND ALUMINUM-SILICON INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 551 - 555

[8] SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1290 - 1296

[9] SOLID-STATE REACTION OF TITANIUM AND (0001) ALPHA-SIC [J]. THIN SOLID FILMS, 1980, 72 (02) : 305 - 311

[10] ADSORPTION OF AL ON CLEAVED SI(111) AT ROOM-TEMPERATURE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (27): : 4897 - 4905

[1] SURFACE MODIFICATION STRATEGIES FOR (100)3C-SIC [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1692 - 1695

[2] AUGER AND ELECTRON ENERGY-LOSS STUDY OF THE PD/SIC INTERFACE AND ITS DEPENDENCE ON OXIDATION [J]. APPLICATIONS OF SURFACE SCIENCE, 1983, 17 (01): : 12 - 22

[3] AUGER AND ELECTRON ENERGY-LOSS STUDY OF THE AL/SIC INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 70 - 72

[4] ELECTRON-STIMULATED DESORPTION OF POSITIVE-IONS FROM HEXAGONAL ALPHA-SIC [J]. SURFACE SCIENCE, 1986, 173 (01) : 234 - 244

[5] Briggs D., 1983, PRACTICAL SURFACE AN

[6] REDUCTION OF SILICON-ALUMINUM INTERDIFFUSION BY IMPROVED SEMICONDUCTOR SURFACE ORDERING [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 110 - 112

[7] PHOTOEMISSION-STUDIES OF ATOMIC REDISTRIBUTION AT GOLD-SILICON AND ALUMINUM-SILICON INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 551 - 555

[8] SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1290 - 1296

[9] SOLID-STATE REACTION OF TITANIUM AND (0001) ALPHA-SIC [J]. THIN SOLID FILMS, 1980, 72 (02) : 305 - 311

[10] ADSORPTION OF AL ON CLEAVED SI(111) AT ROOM-TEMPERATURE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (27): : 4897 - 4905