SIMULATIONS OF ADATOM GEOMETRIES ON THE SI(111) SURFACE USING A MODEL POTENTIAL

被引：24

作者：

KHOR, KE

DASSARMA, S

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.39.1188

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1188 / 1193

页数：6

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[10] PROPOSED UNIVERSAL INTERATOMIC POTENTIAL FOR ELEMENTAL TETRAHEDRALLY BONDED SEMICONDUCTORS [J].

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