ON THE POSSIBILITY OF OBTAINING THE CRYSTALLINE PHASE IN AMORPHOUS FILMS OF SILICON-CARBIDE ON SILICON AT LOW-TEMPERATURES

被引：2

作者：

BEREZHINSKII, LI

VLASKINA, SI

LYASHENKO, GI

RODIONOV, VE

机构：

[1] Institute of Semiconductors, Academy of Sciences of the Ukrainian Ssr

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 121卷 / 02期

关键词：

D O I：

10.1002/pssa.2211210250

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K193 / K197

页数：5

共 7 条

[1]

[Anonymous], 1952, INT TABLES XRAY CRYS, VIII

[2]

BEREZHINSKII LI, 1989, JETP LETT, V15, P44

[3]

BIKER GR, 1969, DEFECTS CRYSTALS SEM, P297

[4] PHYSICS OF AMORPHOUS-SILICON CARBON ALLOYS [J].

BULLOT, J ;

SCHMIDT, MP .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1987, 143 (02) :345-418

[5] PHOTO-LUMINESCENCE IN AMORPHOUS SYSTEM SIXC1-X [J].

ENGEMANN, D ;

FISCHER, R ;

KNECHT, J .

APPLIED PHYSICS LETTERS, 1978, 32 (09) :567-568

[6] GROWTH OF 3C-SIC ON SILICON BY MOLECULAR AND ION-BEAM EPITAXY [J].

MIYAZAWA, T ;

YOSHIDA, S ;

MISAWA, S ;

GONDA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :730-731

[7] INCIPIENT CRYSTALLIZATION OF EVAPORATED GERMANIUM FILM PROBED BY RAMAN-SCATTERING [J].

OKADA, T ;

WAKAYAMA, H ;

KASAHARA, H ;

YAMAMOTO, K .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1986, 55 (05) :1415-1417

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