STRUCTURAL-CHANGE OF OXIDATION-INDUCED FRANK SESSILE DISLOCATION LOOPS IN SILICON

被引：8

作者：

KAWADO, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 05期

关键词：

D O I：

10.1143/JJAP.19.815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：815 / 824

页数：10

共 37 条

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[10] INFLUENCE OF PRE-OXIDATION ANNEALING ON STACKING-FAULT GENERATION DUE TO MECHANICAL DAMAGE ON SILICON SURFACES [J].

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