SELF-LIMITED LAYER-BY-LAYER ETCHING OF SI BY ALTERNATED CHLORINE ADSORPTION AND AR+ ION IRRADIATION

被引：109

作者：

MATSUURA, T ^{[1
]}

MUROTA, J ^{[1
]}

SAWADA, Y ^{[1
]}

OHMI, T ^{[1
]}

机构：

[1] TOHOKU UNIV,FAC ENGN,DEPT ELECTR ENGN,AOBA KU,SENDAI 980,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 20期

关键词：

D O I：

10.1063/1.110340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of self-limited layer-by-layer etching of Si by alternated chlorine adsorption and low energy Ar+ ion irradiation using an ultraclean electron-cyclotron-resonance plasma apparatus. The etch rate per cycle increased with the chlorine supplying time and saturated to a constant value of about 1/2 atomic layer per cycle for Si(100) and 1/3 for Si(lll), which was independent of the chlorine partial pressure in the range of 1.3-6.7 mPa. These results indicate that etching was determined by self-limited adsorption of chlorine. Moreover, the chlorine adsorption rate was found to be described by a Langmuir-type equation with an adsorption rate constant k=83 and 110 (Pa s)(-1) for Si(100) and Si(111), respectively.

引用

页码：2803 / 2805

页数：3

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