ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SI WITHOUT SUBSTRATE HEATING BY ULTRACLEAN PROCESSING

被引：31

作者：

FUKUDA, K ^{[1
]}

MUROTA, J ^{[1
]}

ONO, S ^{[1
]}

MATSUURA, T ^{[1
]}

UETAKE, H ^{[1
]}

OHMI, T ^{[1
]}

机构：

[1] TOHOKU UNIV,FAC ENGN,DEPT ELECTR,SENDAI,MIYAGI 980,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 22期

关键词：

D O I：

10.1063/1.105855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By Ar plasma-enhanced decomposition of SiH4 using ultraclean electron-cyclotron-resonance plasma processing, low-temperature Si epitaxy has been achieved even without external substrate heating for the first time. Ar plasma pre-exposure experiments have revealed that Ar ion energies lower than a few eV are favorable for Si epitaxy at low temperatures, in order to suppress plasma damage on the surface crystallinity. Furthermore, it has been found that addition of H-2 to the Ar plasma is extremely effective to remove the native oxide layer on the Si surface.

引用

页码：2853 / 2855

页数：3

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