LOW-TEMPERATURE SI SURFACE CLEANING BY HYDROGEN BEAM WITH ELECTRON-CYCLOTRON-RESONANCE PLASMA EXCITATION

被引：26

作者：

SHIBATA, T

NANISHI, Y

FUJIMOTO, M

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 07期

关键词：

Ecr-mbe; Electron cyclotron resonance; Hydrogen ecr plasma; Plasma cleaning; Rheed; Si surface; Sims;

D O I：

10.1143/JJAP.29.L1181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si surface cleaning is successfully carried out at as low as 400°C using hydrogen ECR plasma. SIMS analysis reveals no detectable accumulation of either carbon or oxygen at the grown-layer/Si interface. Hydrogen plasma cleaning is found equally effective for unbiased and positively biased Si substrates. On the other hand, helium plasma is not as effective as hydrogen plasma for cleaning. These results imply that the major mechanism involved in the plasma cleaning is chemical reaction between silicon oxide and chemically active hydrogen radicals, rather than physical bombardment by hydrogen ions. © 1990 The Japan Society of Applied Physics.

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收藏

页码：L1181 / L1184

页数：4

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