REMOVAL OF A THIN SIO2 LAYER BY LOW-ENERGY HYDROGEN-ION BOMBARDMENT AT ELEVATED-TEMPERATURES

被引：13

作者：

MIYAKE, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.2376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2376 / 2381

页数：6

共 7 条

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[2] CHANG CC, 1974, CHARACTERIZATION SOL, pCH20
[3] GAO QZ, 1987, JPN J APPL PHYS, V26, pL1576
[4] ISHIZAKA A, 1982, P C MOL BEAM EPITAXY, P183
[5] ROTH J, 1983, SPUTTERING PARTICLE, V2, P121
[6] CURRENT STATUS OF REDUCED TEMPERATURE SILICON EPITAXY BY CHEMICAL VAPOR-DEPOSITION
SRINIVASAN, GR
MEYERSON, BS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (06) : 1518 - 1524
[7] ETCHING OF SIO2-FILMS BY SI IN ULTRAHIGH-VACUUM
TABE, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03): : 534 - 538