CURRENT STATUS OF REDUCED TEMPERATURE SILICON EPITAXY BY CHEMICAL VAPOR-DEPOSITION

被引：32

作者：

SRINIVASAN, GR ^{[1
]}

MEYERSON, BS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 06期

关键词：

D O I：

10.1149/1.2100702

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1518 / 1524

页数：7

共 27 条

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[8] LOW-TEMPERATURE SILICON EPITAXY USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION WITH AND WITHOUT PLASMA ENHANCEMENT [J].

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