HOMOEPITAXIAL FILMS GROWN ON SI(100) AT 150-DEGREES C BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：61

作者：

BREAUX, L

ANTHONY, B

HSU, T

BANERJEE, S

TASCH, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 18期

关键词：

D O I：

10.1063/1.102161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1885 / 1887

页数：3

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