LOW-TEMPERATURE CLEANING OF SI AND GROWTH OF GAAS ON SI BY HYDROGEN PLASMA-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY

被引：11

作者：

KUNITSUGU, Y ^{[1
]}

SUEMUNE, I ^{[1
]}

TANAKA, Y ^{[1
]}

KAN, Y ^{[1
]}

YAMANISHI, M ^{[1
]}

机构：

[1] MATSUSHITA ELECT WORKS LTD,RES & DEV LABS,KADOMA,OSAKA 571,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90358-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：91 / 95

页数：5

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