PHOTOLUMINESCENCE LINE-SHAPE OF EXCITONS IN ALLOY SEMICONDUCTORS

被引：69

作者：

SCHUBERT, EF

TSANG, WT

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.34.2991

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2991 / 2994

页数：4

共 16 条

[1]

BEBB HB, 1972, SEMICONDUCTORS SEMIM, P321

[2]

GOEBEL EO, 1982, GAINASP ALLOY SEMICO, P313

[3] RANDOM DISTRIBUTION OF GA AND AL ATOMS IN MBE GROWN (AL0.5GA0.5)AS [J].

KASHIHARA, Y ;

KASHIWAGURA, N ;

SAKATA, M ;

HARADA, J ;

ARII, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (12) :L901-L903

[4] FREE EXCITON OPTICAL-ABSORPTION IN DIRECT GAP SEMICONDUCTOR ALLOYS [J].

MBAYE, AA ;

RAYMOND, F ;

VERIE, C .

SOLID STATE COMMUNICATIONS, 1984, 50 (05) :459-461

[5] AL-GA DISORDER IN ALXGA1-XAS ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MILLER, RC ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (04) :334-335

[6]

NELSON RJ, 1982, EXCITONS, P319

[7] LUMINESCENCE IN HIGH-PURITY IN0.53GA0.47AS [J].

PENNA, AFS ;

SHAH, J ;

DIGIOVANNI, AE ;

DENTAI, AG .

SOLID STATE COMMUNICATIONS, 1984, 51 (04) :217-220

[8] SPATIAL VARIATION OF BANDGAP ENERGY IN IN0.53GA0.47AS [J].

PENNA, AFS ;

SHAH, J ;

CHANG, TY ;

BURROUGHS, MS ;

NAHORY, RE ;

TAMARGO, M ;

COX, HM .

SOLID STATE COMMUNICATIONS, 1984, 51 (06) :425-428

[9] FREE AND BOUND EXCITONS AND THE EFFECT OF ALLOY DISORDER IN MBE GROWN ALXGA1-XAS [J].

SCHUBERT, EF ;

PLOOG, K .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (23) :4549-4559

[10] ALLOY BROADENING IN PHOTOLUMINESCENCE SPECTRA OF ALXGA1-XAS [J].

SCHUBERT, EF ;

GOBEL, EO ;

HORIKOSHI, Y ;

PLOOG, K ;

QUEISSER, HJ .

PHYSICAL REVIEW B, 1984, 30 (02) :813-820

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