LUMINESCENCE IN HIGH-PURITY IN0.53GA0.47AS

被引：21

作者：

PENNA, AFS ^{[1
]}

SHAH, J ^{[1
]}

DIGIOVANNI, AE ^{[1
]}

DENTAI, AG ^{[1
]}

机构：

[1] AT&T BELL LABS,CRAWFORD HILL,NJ

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 51卷 / 04期

关键词：

D O I：

10.1016/0038-1098(84)90999-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：217 / 220

页数：4

共 14 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792

[2]

BHATTACHARYA PK, UNPUB

[3] NEAR-BAND-GAP ABSORPTION AND PHOTO-LUMINESCENCE OF IN0.53GA0.47AS SEMICONDUCTOR ALLOY [J].

CHEN, YS ;

KIM, OK .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7392-7396

[4]

HOPFIELD JJ, 1964, 7TH P INT C PHYS SEM, P725

[5] OPTICAL STUDIES OF IN0.53GA0.47AS [J].

MARZIN, JY ;

BENCHIMOL, JL ;

SERMAGE, B ;

ETIENNE, B ;

VOOS, M .

SOLID STATE COMMUNICATIONS, 1983, 45 (02) :79-82

[6] GALNAS-ALLNAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

OHNO, H ;

WOOD, CEC ;

RATHBUN, L ;

MORGAN, DV ;

WICKS, GW ;

EASTMAN, LF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4033-4037

[7] TEMPERATURE DEPENDENCE OF ENERGY GAP IN GAAS AND GAP [J].

PANISH, MB ;

CASEY, HC .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :163-&

[8] GA0.47IN0.53AS - A TERNARY SEMICONDUCTOR FOR PHOTODETECTOR APPLICATIONS [J].

PEARSALL, TP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (07) :709-720

[9]

PEARSALL TP, 1982, GAINASP ALLOY SEMICO

[10]

PEARSALL TP, 1981, I PHYS C SER, V56, P639

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