AG AND CO CLUSTER DEPOSITION ON GAAS(110) - FERMI LEVEL PINNING IN THE ABSENCE OF METAL-INDUCED GAP STATES AND DEFECTS

被引：31

作者：

WADDILL, GD

ALDAO, CM

VITOMIROV, IM

ANDERSON, SG

CAPASSO, C

WEAVER, JH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：950 / 957

页数：8

共 38 条

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