ATOM PROBE FIM INVESTIGATION OF VOIDS IN A-GE

被引：17

作者：

KRISHNASWAMY, SV ^{[1
]}

MESSIER, R ^{[1
]}

NG, YS ^{[1
]}

TSONG, TT ^{[1
]}

MCLANE, SB ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期

关键词：

D O I：

10.1016/0022-3093(80)90649-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：531 / 536

页数：6

共 24 条

[1]

BARNA A, 1973, AMORPHOUS LIQUID SEM, V2

[2]

BARNA A, 1972, J NONCRYST SOL, V8, P381

[3] ANISOTROPIC MICROSTRUCTURE IN EVAPORATED AMORPHOUS GERMANIUM FILMS [J].

CARGILL, GS .

PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1372-&

[4] HIGH-RESOLUTION ELECTRON MICROSCOPE OBSERVATION OF VOIDS IN AMORPHOUS GE [J].

DONOVAN, TM ;

HEINEMAN.K .

PHYSICAL REVIEW LETTERS, 1971, 27 (26) :1794-&

[5] OPTICAL EVIDENCE FOR A NETWORK OF CRACKLIKE VOIDS IN AMORPHOUS GERMANIUM [J].

GALEENER, FL .

PHYSICAL REVIEW LETTERS, 1971, 27 (25) :1716-&

[6]

GILBERT LR, 1978, THIN SOLID FILMS, V54, P151

[7] ELECTRICAL AND STRUCTURAL-PROPERTIES OF AMORPHOUS GERMANIUM [J].

HAUSER, JJ ;

STAUDINGER, A .

PHYSICAL REVIEW B, 1973, 8 (02) :607-615

[8] SIMULATION OF STRUCTURAL ANISOTROPY AND VOID FORMATION IN AMORPHOUS THIN-FILMS [J].

HENDERSON, D ;

BRODSKY, MH ;

CHAUDHARI, P .

APPLIED PHYSICS LETTERS, 1974, 25 (11) :641-643

[9] TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF TIC AND VC-TIC DEPOSITS PREPARED BY ACTIVATED REACTIVE EVAPORATION [J].

JACOBSON, BE ;

BUNSHAH, RF ;

NIMMAGADDA, R .

THIN SOLID FILMS, 1978, 54 (01) :107-118

[10]

KELLOGG GL, UNPUBLISHED

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